2012. 8. 21 1/3 semiconductor technical data KTB2530 epitaxial planar pnp transistor revision no : 0 high power amplifier darlington application. features h complementary to ktd1530 h recommended for 80w audio amplifier output stage. maximum rating (ta=25 ? ) to-3p(n)-e c g l k r a d b h f i d pp t j q 1 2 3 m n o e a millimeters dim b c d d e f g h i j k l o n p q m 19.90 0.20 2.00 0.20 1.00 0.20 3.00 0.20 3.80 0.20 3.50 0.20 13.90 0.20 12.76 0.20 23.40 0.20 1.5+0.15-0.05 16.50 0.30 1.40 0.20 13.60 0.20 9.60 0.20 5.45 0.30 r t 0.60+0.15-0.05 15.60 0.20 + _ 4.80 0.20 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 3.20 0.10 + _ 18.70 0.20 + _ electrical characteristics (ta=25 ? ) characteristic symbol rating unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -10 a base current i b -1 a collector power dissipation (tc=25 ? ) p c 100 w junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =-160v, i e =0 - - -100 a emitter cut-off current i ebo v eb =-5v, i c =0 - - -100 a collector-emitter breakdown voltage v (br)ceo i c =-30ma, i b =0 -150 - - v dc current gain h fe v ce =-4v, i c =-7a 15,000 - 30,000 collector-emitter saturation voltage v ce(sat) i c =-7a, i b =-7ma - - -2.5 v base-emitter saturation voltage v be(sat) i c =-7a, i b =-7ma - - -3.0 v transition frequency f t v ce =-12v, i c =-2a - 50 - mhz collector output capacitance c ob v cb =-10v, i e =0, f=1mhz - 230 - pf collecto r base emitter 70 ? equivalent circuit
2012. 8. 21 2/3 KTB2530 revision no : 0
2012. 8. 21 3/3 KTB2530 revision no :0
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